Scientific
Papers
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8 Move2THz-related PUBLICATIONS in the OPEN ACCESS PDF BOOK - the outcome from EuMW Week 2024 (Paris) workshop “Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications”. This book presents the latest research roadmaps and achievements from the European ecosystem (industry, research, and academia) driving the development of future wireless, wired, optical and satcom applications utilizing the mm-wave and sub-THz bands. It covers the entire value chain, including technologies, devices, characterization, architectures, circuits, 3D heterogeneous integration and packaging.
Find topics such as:
- "B55X: A SHIFT in STMicroelectronics BiCMOS Technologies"
- "Advanced Substrate Technologiesfor Sub-THz Era"
- "RF Technology Roadmap for 5G and 6G RF Front-end Systems"
- "A CMOS Compatible III-V-on-300 mm Si Technology for Future High-speed Communication Systems: Challenges and Possibilities"
- and other.
PUBLICATION (Conference proceedings)
“InP DHBT AMUX Integrated Circuits for Beyond-200-Gbaud Optical Communications”
—by Romain Hersent, Qian Hu , Agnieszka Konczykowska, Mohand Achouche, and Bertrand Ardouin.
“This paper reports on key considerations for analog multiplexers (AMUX) implementation in next generation >200 GBd coherent optical TRx. The impact of Nyquist Pulse Shaping and clock jitter on the AMUX SNDR is studied up to 280 GBd.”
PUBLICATION (Research article)
“Thermal strain management of III–V heterostructures grown on InP-on-silicon (InPoSi) substrates”
—by C. Besancon, F. Martin, B. Ghyselen, L. Largeau, F. Fournel, L. Sanchez, T. Bria, O. Mourey, C. Navone, J. Decobert
“Recently, an approach consisting of integrating a thin InP buffer layer onto a silicon (InPoSi) substrate through direct bonding, followed by epitaxial regrowth on the bonded layer has been developed.”
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PUBLICATION (Journal article)
“InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modelling up to 500 GHz”
—by Marina Deng, Chhandak Mukherjee, Lucas R´eveil, Akshay M. Arabhavi, Sara Hamzeloui, Colombo R. Bolognesi, Magali De Matos, and Cristell Maneux.
“This paper presents a new methodology to accurately characterize InP bipolar transistors up to 500 GHz.”
“In this work, a systematic study for silicon doping of InGaAs via the metalorganic di-tert-butylsilane (DTBSi) as a non-gaseous alternative to common gaseous precursors in a vertical close-coupled showerhead metalorganic vapor phase epitaxy (MOVPE) reactor is conducted.”
PUBLICATION (Journal article)
“n+ Doped In0.53Ga0.47As Using Di-Tert-Butylsilane in a Vertical MOVPE Reactor”
—by Alexander Possberg, Fabian van Essen, Hao Zhang, Jonas Watermann, Jonathan Abts, Jan Ebbert, Konrad Mueller, Patrick Häuser, Lisa Liborius, Nils Weimann.
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BOOK
“Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications”
—Editors: Björn Debaillie, Philippe Ferrari, Didier Belot, François Brunier, Christophe Gaquiere, Pierre Busson, Urtė Steikūnienė
This book presents the latest research roadmaps and achievements from the European ecosystem (industry, research, and academia) driving the development of future wireless, wired, optical and satcom applications utilizing the mm-wave and sub-THz bands.
PUBLICATION (Chapter in the Book)
“Advanced Substrate Technologies for Sub-THz Era” —by François Brunier (Soitec)
“The increasing demand for performance, speed, and efficiency is pushing wireless applications to operate at sub-THz frequencies and beyond.”
PUBLICATION (Chapter in the Book)
“RF Technology Roadmap for 5G and 6G RF Front-end Systems” —by Yvan Morandini (Soitec)
“In this paper, we provide a roadmap of RF technology including the engineered substrates enabling to solve design challenges of wireless communication systems.”
PUBLICATION (Chapter in the Book)
“B55X: A SHIFT in STMicroelectronics BiCMOS Technologies”
—by P. Chevalier, A. Gauthier, N. Guitard, V. Milon, F. Monsieur, N. Derrier, C. Deglise-Favre, D. Céli, C. Durand, O. Foissey, F. Sonnerat, F. Gianesello, D. Gloria
“This paper examines why BiCMOS055X is also a significant shift in STMicroelectronics BiCMOS offer, first in terms of innovation and performances, but also with respect to the device offer that has been tailored to address different applications, turning out in a versatile technology offer.”
PUBLICATION (Chapter in the Book)
“Challenges for 2.5D and 3D Integration of InP HBT Technology”
—by Bertrand Ardouin, Tom K. Johansen, Antoine Chauvet, Romain Hersent, Virginie Nodjiadjim, Agnieszka Konczykowska, Nil Davy, Muriel Riet and Colin Mismer
“InP HBT cannot and will not replace SiGe BiCMOS, but can adequately complement their already powerful capabilities, provided adequate and ambitious (yet not out of reach) developments are achieved.”
ACKNOWLEDGMENT: Move2THz is supported by the Chips Joint Undertaking and its members, including the top-up funding by National Authorities under Grant Agreement n° 101139842.
Funded by the European Union. Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European Union or the granting authority. Neither the European Union nor the granting authority can be held responsible for them.
Photos © Christophe LEPETIT
© 2024 by Move2THz Consortium
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PUBLICATION (Chapter in the Book)
“A CMOS Compatible III-V-on-300 mm Si Technology for Future High-speed Communication Systems: Challenges and Possibilities”
—by A. Vais (imec), A. Kumar, G. Boccardi, S. Yadav, Y. Mols, R. Alcotte, B. Vermeersch, M. Ingels, U. Peralagu, C. Roda Neve, B. Ghyselen, B. Parvais, P. Wambacq, B. Kunert, and N. Collaert
“In this paper, we present motivation for the upscaling of III-V technology on to 300 mm Si platforms. A comparison of various options for such III-V on Si technology is described.”
PUBLICATION (Presentation Abstract in the Book)
“InP on Si Technologies for NextGeneration Optical Communication High-speed Analog Front-Ends” —by Romain Hersent (III-V Lab)
“ Within the Move2THz project, several paths are being explored to achieve seamless integration of InP technologies onto Si, within commercially viable frameworks. This is expected to substantially expand the opportunities for InP devices to serve as the backbone of future communication systems’ analog front-ends.”
PUBLICATION (Presentation Abstract in the Book)
“Heterointegration Approaches for InP-HBT Technologies for 5G Applications and Beyond” —by Hady Yacoub (Ferdinand-Braun-Institut)
“III-V based semiconductors can deliver higher output powers with higher efficiencies; however, they lack the technology readiness levels of their silicon-based counterparts.”
PUBLICATION (Presentation Abstract in the Book)
“SiGe BiCMOS & III-V Technologies Heterogeneous Integration Challenges”
—by Frederic Gianesello (STMicroelectronics)
“To address consumer needs for more ubiquitous mobility, integration has been driving the wireless business to achieve the appropriate cost and form factors. This led to the progressive replacement of historical III-V MMIC technology (such as GaAs) by Si-based ones (RF CMOS, RF-SOI, and BiCMOS).”