Scientific
Papers
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8 Move2THz-related PUBLICATIONS in the OPEN ACCESS PDF BOOK - the outcome from EuMW Week 2024 (Paris) workshop “Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications”. This book presents the latest research roadmaps and achievements from the European ecosystem (industry, research, and academia) driving the development of future wireless, wired, optical and satcom applications utilizing the mm-wave and sub-THz bands. It covers the entire value chain, including technologies, devices, characterization, architectures, circuits, 3D heterogeneous integration and packaging.
Find topics such as:
- "B55X: A SHIFT in STMicroelectronics BiCMOS Technologies"
- "Advanced Substrate Technologiesfor Sub-THz Era"
- "RF Technology Roadmap for 5G and 6G RF Front-end Systems"
- "A CMOS Compatible III-V-on-300 mm Si Technology for Future High-speed Communication Systems: Challenges and Possibilities"
- and other.
PUBLICATION (Journal Article)
—by Y. Mols, R. Alcotte, Z.X. Guo, A. Vais, S. Yadav, A. Possberg, M. De Maeyer, P. Swekis, D. Colucci, C. Roda Neve, B. Ghyselen, U. Peralagu, B. Parvais, N. Collaert, R. Langer, and B. Kunert.
“Achieving low-cost high-volume production of InP-based technologies will require upscaling to large-diameter silicon fabrication compatible platforms.”
PUBLICATION (Conference Proceedings)
—by Jhe-An Lin, Akanksha Kapoor, Marcel Verheijen, Victor Dolores Calzadilla, Kevin Williams, and Yuqing Jiao.
“Defect-free InGaAsP multi-quantum wells were epitaxially grown on InP-on-Si wafers with quality comparable to InP wafers. However, the InGaAsP separate confinement heterostructure (SCH) showed 5% less phosphorus to be latticematched with InP; growth-temperature calibration can mitigate these deviations, enabling direct active-passive integration on silicon.”
PUBLICATION (Conference Proceedings)
“Fabrication and development of InP HEMTs on silicon substrate based on a new integration technique”
—by Francesco Fortunato, Nelson Rebelo, Claire Besançon, Florence Martin, Bruno Ghyselen, Jean Decobert, Johan Bergsten and Helena Rodilla.
“Here we explore fabrication applicability of traditional InP-based High Electron Mobility Transistors (InP HEMTs) on InP-on-Si (InPoSi) wafers developed by Smart Cut, a method for transferring InP onto Si that reduces cost and fabrication complexity.”
PUBLICATION (Conference Proceedings)
—by Filippo Ciabattini, Sara Hamzeloui, Akshay M. Arabhavi, G. Bonomo, Mojtaba Ebrahimi, Andrea Cercaci, Olivier Ostinelli, and C. R. Bolognesi.
“We report the development of transferred-substrate InP/GaAsSb Double Heterojunction Bipolar Transistors on silicon (DHBT). The emitter-to-collector-grown epitaxial structure is transferred on Silicon via Au-Au bonding.”
PUBLICATION (Conference Poster)
—by Cisse Moussa, Davy Nil, Nodjiadjim Virginie, Ardouin Bertrand, Mismer Colin, Maneux Cristell, Marc François, and Deng Marina.
“The results clearly demonstrate the benefits of utilizing on-wafer calibration methods
to improve measurement accuracy by significantly reducing the parasitic effects due to the transistor’s interconnects.”
PUBLICATION (Journal Article)
—by YSara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Mojtaba Ebrahimi, Giorgio Bonomo, Andrea Cercaci, Olivier Ostinelli, and Colombo R. Bolognesi.
“We report one- and two-stage four-way combined power amplifiers (PAs) designed and fabricated in the ETHZ 250-nm InP/GaAsSb double heterojunction bipolar transistor (DHBT) technology.”
PUBLICATION (Conference Proceedings)
—by R. Hersent, F. Blache, F. Jorge, V. Nodjiadjim, N. Davy, C. Mismer, M. Riet, L. Lotti, A. Rylyakov, A. Konczykowska, and B. Ardouin.
“We report on a beyond-110-GHz bandwidth 4-Vppd output swing linear modulator driver, implemented in 0.5-µm indium phosphide (InP) double heterojunction bipolar transistors (DHBT).”
PUBLICATION (Research Article)
—by C. Besancon, F. Martin, B. Ghyselen, L. Largeau, F. Fournel, L. Sanchez, T. Bria, O. Mourey, C. Navone, J. Decobert
“Recently, an approach consisting of integrating a thin InP buffer layer onto a silicon (InPoSi) substrate through direct bonding, followed by epitaxial regrowth on the bonded layer has been developed.”
PUBLICATION (Conference Proceedings)
—by Andrea Cercaci, Sara Hamzeloui, Filippo Ciabattini, Mojtaba Ebrahimi, Akshay M. Arabhavi, Olivier Ostinelli, and Colombo R. Bolognesi.
“This work investigates the use of non-uniform emitter-finger widths in multi-finger InP/GaAsSb doubleheterojunction bipolar transistors (DHBTs) to improve thermal robustness without degrading RF performance.”
PUBLICATION (Research Article)
—by Alexander Possberg, Fabian van Essen, Hao Zhang, Jonas Watermann, Jonathan Abts, Jan Ebbert, Konrad Mueller, Patrick Häuser, Lisa Liborius, Nils Weimann.
“In this work, a systematic study for silicon doping of InGaAs via the metalorganic di-tert-butylsilane (DTBSi) as a non-gaseous alternative to common gaseous precursors in a vertical close-coupled showerhead metalorganic vapor phase epitaxy (MOVPE) reactor is conducted.”
PUBLICATION (Journal Article)
—by Filippo Ciabattini, Sara Hamzeloui, Akshay Mahadev Arabhavi, Mojtaba Ebrahimi, Olivier Ostinelli, and Colombo Bolognesi.
“Future telecommunication systems are set to revolutionize connectivity, driven by advancements in technologies like 6 G, artificial intelligence, and the Internet of Things (IoT).”
PUBLICATION (Journal Article)
—by Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Giorgio Bonomo, Mojtaba Ebrahimi, Rimjhim Chaudhary, Markus Müller, Olivier Ostinelli, Michael Schröter, and Colombo R. Bolognesi.
“We report the 170-GHz power performance of multifinger common-emitter (CE) 300-nm indium phosphide (InP)/GaAsSb double heterojunction bipolar transistors (DHBTs).”
PUBLICATION (Journal Article)
—by Romain Hersent, Qian Hu , Agnieszka Konczykowska, Mohand Achouche, and Bertrand Ardouin.
“This paper reports on key considerations for analog multiplexers (AMUX) implementation in next generation >200 GBd coherent optical TRx. The impact of Nyquist Pulse Shaping and clock jitter on the AMUX SNDR is studied up to 280 GBd.”
PUBLICATION (Conference Proceedings)
—by A. Vais, A. Kumar, S. Yadav, G. Boccardi, Y. Mols, R. Alcotte, B. Vermeersch, U. Peralagu, C. Roda Neve, B. Ghyselen, B. Parvais, B. Kunert, and N. Collaert.
“In this work, we present the first demonstration of InP HBTs grown and fabricated on an engineered InPOSi substrate. Physical and electrical characterizations were performed to measure its crystal quality and device performance.
PUBLICATION (Journal Article)
—by Sara Hamzeloui, A. M. Arabhavi, F. Ciabattini, M. Ebrahimi, O. Ostinelli, and C. R. Bolognesi
“Thin collector indium phosphide (InP)/gallium indium arsenide antimonide (GaInAsSb) double heterojunction bipolar transistors (DHBTs) exhibit higher open-base-collector–emitter (BVCEO) and open-emitter-collector–base breakdown (BVCBO) voltages than ternary InP/gallium arsenide antimonide (GaAsSb) DHBTs implemented with identical collector layers: with a GaInAsSb base, BVCEO and BVCBO values are 20% and 43% higher, respectively.”
PUBLICATION (Journal Article)
—by Marina Deng, Chhandak Mukherjee, Lucas R´eveil, Akshay M. Arabhavi, Sara Hamzeloui, Colombo R. Bolognesi, Magali De Matos, and Cristell Maneux.
“This paper presents a new methodology to accurately characterize InP bipolar transistors up to 500 GHz.”
BOOK
—Editors: Björn Debaillie, Philippe Ferrari, Didier Belot, François Brunier, Christophe Gaquiere, Pierre Busson, Urtė Steikūnienė
This book presents the latest research roadmaps and achievements from the European ecosystem (industry, research, and academia) driving the development of future wireless, wired, optical and satcom applications utilizing the mm-wave and sub-THz bands.
PUBLICATION (Chapter in the Book)
“The increasing demand for performance, speed, and efficiency is pushing wireless applications to operate at sub-THz frequencies and beyond.”
PUBLICATION (Chapter in the Book)
“In this paper, we provide a roadmap of RF technology including the engineered substrates enabling to solve design challenges of wireless communication systems.”
PUBLICATION (Chapter in the Book)
—by P. Chevalier, A. Gauthier, N. Guitard, V. Milon, F. Monsieur, N. Derrier, C. Deglise-Favre, D. Céli, C. Durand, O. Foissey, F. Sonnerat, F. Gianesello, D. Gloria
“This paper examines why BiCMOS055X is also a significant shift in STMicroelectronics BiCMOS offer, first in terms of innovation and performances, but also with respect to the device offer that has been tailored to address different applications, turning out in a versatile technology offer.”
PUBLICATION (Chapter in the Book)
—by Bertrand Ardouin, Tom K. Johansen, Antoine Chauvet, Romain Hersent, Virginie Nodjiadjim, Agnieszka Konczykowska, Nil Davy, Muriel Riet and Colin Mismer
“InP HBT cannot and will not replace SiGe BiCMOS, but can adequately complement their already powerful capabilities, provided adequate and ambitious (yet not out of reach) developments are achieved.”
ACKNOWLEDGMENT: Move2THz is supported by the Chips Joint Undertaking and its members, including the top-up funding by National Authorities under Grant Agreement n° 101139842.
Funded by the European Union. Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European Union or the granting authority. Neither the European Union nor the granting authority can be held responsible for them.
Photos © Christophe LEPETIT
© 2024 by Move2THz Consortium
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PUBLICATION (Presentation Abstract in the Book)
“Within the Move2THz project, several paths are being explored to achieve seamless integration of InP technologies onto Si, within commercially viable frameworks. This is expected to substantially expand the opportunities for InP devices to serve as the backbone of future communication systems’ analog front-ends.”
PUBLICATION (Chapter in the Book)
—by A. Vais (imec), A. Kumar, G. Boccardi, S. Yadav, Y. Mols, R. Alcotte, B. Vermeersch, M. Ingels, U. Peralagu, C. Roda Neve, B. Ghyselen, B. Parvais, P. Wambacq, B. Kunert, and N. Collaert
“In this paper, we present motivation for the upscaling of III-V technology on to 300 mm Si platforms. A comparison of various options for such III-V on Si technology is described.”
PUBLICATION (Presentation Abstract in the Book)
“III-V based semiconductors can deliver higher output powers with higher efficiencies; however, they lack the technology readiness levels of their silicon-based counterparts.”
PUBLICATION (Presentation Abstract in the Book)
“To address consumer needs for more ubiquitous mobility, integration has been driving the wireless business to achieve the appropriate cost and form factors. This led to the progressive replacement of historical III-V MMIC technology (such as GaAs) by Si-based ones (RF CMOS, RF-SOI, and BiCMOS).”