
© 2025 by Move2THz Consortium


ACKNOWLEDGMENT: Move2THz is supported by the Chips Joint Undertaking and its members, including the top-up funding by National Authorities of France, Switzerland, Germany, Sweden, the Netherlands, and Belgium, under Grant Agreement n° 101139842.
Funded by the European Union. Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European Union or the granting authority. Neither the European Union nor the granting authority can be held responsible for them.
Photos © Christophe LEPETIT
Move2THz at the 2025 BCICTS, Arizona
12-15 October 2025
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On October 12-15, the Move2THz project featured in the 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Two important oral presentations were implemented during this event:
1. Oral presentation by invited speaker Romain Hersent (III-V Lab) with the talk: “High-efficiency >110-GHz Bandwidth 4-Vppd InP-DHBT Linear Modulator Driver for Beyond-200-GBd Optical Transceivers”.
2. Oral presentation “Multi-Finger InP/GaAsSb DHBTs with Non-Uniform Emitter Finger Widths for Improved Thermal Performance”, authors: A. Cercaci, S. Hamzeloui, F. Ciabattini, M. Ebrahimi, A.M. Arabhavi, O. Ostinelli, C.R. Bolognesi.
The conference presentation resulted in publications in the official IEEE conference proceedings and was subsequently published as a scientific article in IEEE Xplore:
1. “High-efficiency >110-GHz Bandwidth 4-Vppd InP-DHBT Linear Modulator Driver for Beyond-200-GBd Optical Transceivers”. Available at: https://hal.science/hal-05500987
2. “Multi-Finger InP/GaAsSb DHBTs with Non-Uniform Emitter Finger Widths for Improved Thermal Performance”. Available at: https://ieeexplore.ieee.org/abstract/document/11211401
𝐓𝐡𝐞 𝐈𝐄𝐄𝐄 𝐁𝐢𝐂𝐌𝐎𝐒 𝐚𝐧𝐝 𝐂𝐨𝐦𝐩𝐨𝐮𝐧𝐝 𝐒𝐞𝐦𝐢𝐜𝐨𝐧𝐝𝐮𝐜𝐭𝐨𝐫 𝐒𝐲𝐦𝐩𝐨𝐬𝐢𝐮𝐦 (BCICTS) is where engineers, researchers, and tech leaders come together to shape the future of microchips and high-speed electronics. 📡Explore more on their official website: https://bcicts.org/
These sub-committees are organized to reflect the rapidly evolving developments in bipolar, BiCMOS and compound semiconductor circuits and devices. Submissions are encouraged in all areas of advanced circuits, devices and modeling, with particular emphasis on:
• Bipolar/BiCMOS devices, circuits and technologies
• 5G ICs, GaN HPAs/LNAs, InP THz PAs
• High Performance RF Switch Technologies
• GaN HEMT and other wide bandgap power devices
• Analog, RF & Microwave ICs
• mmW & THz ICs
• Process & Device Technology
• Modeling/Simulation
• Optical CMOS/SiGe Transceivers
• High Speed Digital, Mixed Signal, and Electro-Optic IC’s





