© 2025 by Move2THz Consortium
ACKNOWLEDGMENT: Move2THz is supported by the Chips Joint Undertaking and its members, including the top-up funding by National Authorities of France, Switzerland, Germany, Sweden, the Netherlands, and Belgium, under Grant Agreement n° 101139842.
Funded by the European Union. Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European Union or the granting authority. Neither the European Union nor the granting authority can be held responsible for them.
Photos © Christophe LEPETIT
Move2THz Presented at IEEE IEDM 2025, San Francisco
6–10 December 2025
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A Move2THz project partner participated in the 2025 IEEE International Electron Devices Meeting (IEDM 2025), one of the world’s leading conferences in semiconductor device technology, held from 6–10 December 2025 in San Francisco, California, USA.
As part of the conference technical programme, the consortium delivered an oral presentation entitled:
“InP/GaAsSb Double Heterojunction Bipolar Transistors on Silicon Delivering POUT,SAT > 2.2 W/mm and PAE > 38% at 140 GHz”
The authors of the work are:
F. Ciabattini
S. Hamzeloui
A. M. Arabhavi
G. Bonomo
M. Ebrahimi
A. Cercaci
O. Ostinelli
C. R. Bolognesi
The contribution was published in the official IEEE conference proceedings and is available through IEEE Xplore: “InP/GaAsSb Double Heterojunction Bipolar Transistors on Silicon Delivering POUT,SAT > 2.2 W/mm and PAE > 38% at 140 GHz”
https://ieeexplore.ieee.org/abstract/document/11353578
More information about the event is available on the official IEEE IEDM website:
https://www.ieee-iedm.org/
Participation in IEDM 2025 demonstrates Move2THz’s active involvement in the global semiconductor research community and highlights the project’s commitment to disseminating cutting-edge scientific results through internationally recognized conferences and publications.