The Move2THz project was represented at the GDR SOC² 2026 Conference, held from 17–19 June 2026, where project partners presented their latest research on high-frequency semiconductor device characterisation for future millimetre-wave applications.

During the conference, the research team presented a poster entitled:
"𝘚𝘮𝘢𝘭𝘭-𝘚𝘪𝘨𝘯𝘢𝘭 𝘢𝘯𝘥 𝘏𝘪𝘨𝘩-𝘍𝘳𝘦𝘲𝘶𝘦𝘯𝘤𝘺 𝘕𝘰𝘪𝘴𝘦 𝘊𝘩𝘢𝘳𝘢𝘤𝘵𝘦𝘳𝘪𝘻𝘢𝘵𝘪𝘰𝘯 𝘰𝘧 410-𝘎𝘏𝘻 𝘧𝘛 𝘐𝘯𝘗 𝘋𝘏𝘉𝘛 𝘧𝘰𝘳 𝘮𝘮-𝘞𝘢𝘷𝘦 𝘈𝘱𝘱𝘭𝘪𝘤𝘢𝘵𝘪𝘰𝘯𝘴."

The paper is authored by researchers from the IMS Laboratory, University of Bordeaux, and the Department of Information Technology and Electrical Engineering at ETH Zürich, demonstrating the strong collaboration between Move2THz partners.

𝐀𝐮𝐭𝐡𝐨𝐫𝐬:
Raziyeh Sharifi¹
Moussa Cissé¹
Valentin Thary¹
Ralf Flückiger²
Rickard Lövblom²
Olivier Ostinelli²
Colombo R. Bolognesi²
Magali De Matos¹
Francois Marc¹
Cristell Maneux¹
Chhandak Mukherjee¹
Marina Deng¹

¹ IMS Laboratory, University of Bordeaux, CNRS UMR 5218, Bordeaux INP, Talence, France
² Department of Information Technology and Electrical Engineering, ETH Zürich, 8092 Zürich, Switzerland

The presentation provided an excellent opportunity to share the latest research results with the semiconductor and integrated circuits community, exchange ideas with experts in the field, and strengthen scientific collaborations supporting the Move2THz mission of enabling sustainable, high-performance InP technologies for future mm-wave and sub-THz applications.